MJ11032
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- Mfr.Part #
- MJ11032
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 50A TO204
- Stock
- 35,270
- In Stock ：
- 35,270
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 50A
- Published :
- 2002
- Radiation Hardening :
- No
- Length :
- 38.86mm
- Current Rating :
- 50A
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 25A 5V
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Pins :
- 2
- Power Dissipation :
- 300W
- Polarity :
- NPN
- Terminal Form :
- PIN/PEG
- Contact Plating :
- Copper, Silver, Tin
- Collector Emitter Saturation Voltage :
- 2.5V
- Collector Emitter Voltage (VCEO) :
- 120V
- Current - Collector Cutoff (Max) :
- 2mA
- Element Configuration :
- Single
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 300W
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Temperature :
- -55°C~200°C TJ
- Pin Count :
- 2
- Number of Terminations :
- 2
- JESD-609 Code :
- e1
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- hFE Min :
- 1000
- Collector Emitter Breakdown Voltage :
- 120V
- Package / Case :
- TO-204AE
- Width :
- 26.67mm
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 500mA, 50A
- Max Collector Current :
- 50A
- Collector Base Voltage (VCBO) :
- 120V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 120V
- Packaging :
- Tray
- Height :
- 8.51mm
- Datasheets
- MJ11032
NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole
MJ11032G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 25A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 500mA, 50A.Continuous collector voltages of 50A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 50A volts.
MJ11032G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11032G Applications
There are a lot of ON Semiconductor
MJ11032G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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