MJ11030

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

2.5V

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Voltage - Rated DC :

90V

Case Connection :

COLLECTOR

Max Collector Current :

50A

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 500mA, 50A

Lead Free :

Contains Lead

Package / Case :

TO-204AE

Mounting Type :

Through Hole

Terminal Form :

PIN/PEG

Collector Emitter Voltage (VCEO) :

3.5V

Max Power Dissipation :

300W

Collector Base Voltage (VCBO) :

90V

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Surface Mount :

No

Peak Reflow Temperature (Cel) :

240

Published :

2008

JESD-609 Code :

e0

Number of Terminations :

2

Current Rating :

50A

Polarity :

NPN

Pin Count :

2

Number of Pins :

2

Collector Emitter Breakdown Voltage :

90V

Packaging :

Tray

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

2mA

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~200°C TJ

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 25A 5V

Number of Elements :

1

Reach Compliance Code :

not_compliant