MJ11028G

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Mfr.Part #
MJ11028G
Manufacturer
onsemi
Package / Case
TO-204AE
Datasheet
Download
Description
TRANS NPN DARL 60V 50A TO204
Stock
9,512
In Stock :
9,512

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
50A
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Time@Peak Reflow Temperature-Max (s) :
40
Published :
2002
Collector Base Voltage (VCBO) :
60V
Lead Free :
Lead Free
Current Rating :
50A
Case Connection :
COLLECTOR
Factory Lead Time :
2 Weeks
Emitter Base Voltage (VEBO) :
5V
Peak Reflow Temperature (Cel) :
260
Max Power Dissipation :
300W
Element Configuration :
Single
Radiation Hardening :
No
Number of Pins :
2
Pin Count :
2
Voltage - Rated DC :
50V
Transistor Element Material :
SILICON
Terminal Position :
BOTTOM
Vce Saturation (Max) @ Ib, Ic :
3.5V @ 500mA, 50A
Mounting Type :
Through Hole
Package / Case :
TO-204AE
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Terminal Form :
PIN/PEG
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
JESD-609 Code :
e1
Number of Terminations :
2
Continuous Collector Current :
50A
Surface Mount :
No
Operating Temperature :
-55°C~200°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 25A 5V
Collector Emitter Saturation Voltage :
2.5V
REACH SVHC :
No SVHC
Transistor Application :
AMPLIFIER
Current - Collector Cutoff (Max) :
2mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tray
Polarity :
NPN
Collector Emitter Breakdown Voltage :
60V
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
60V
Transistor Type :
NPN - Darlington
Number of Elements :
1
Power Dissipation :
300mW
Datasheets
MJ11028G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJ11028G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:2, Mounting Type:Through Hole, Package / Case:TO-204AE, Number of Terminations:2, Operating Temperature:-55°C~200°C TJ, MJ11028G pinout, MJ11028G datasheet PDF, MJ11028G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJ11028G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJ11028G


NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole

MJ11028G Overview


In this device, the DC current gain is 1000 @ 25A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 500mA, 50A.A 50A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.

MJ11028G Features


the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A


MJ11028G Applications


There are a lot of ON Semiconductor
MJ11028G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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