MJ11028G
- Mfr.Part #
- MJ11028G
- Manufacturer
- onsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 50A TO204
- Stock
- 9,512
- In Stock :
- 9,512
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 50A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Current Rating :
- 50A
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 300W
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Number of Pins :
- 2
- Pin Count :
- 2
- Voltage - Rated DC :
- 50V
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 500mA, 50A
- Mounting Type :
- Through Hole
- Package / Case :
- TO-204AE
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Terminal Form :
- PIN/PEG
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JESD-609 Code :
- e1
- Number of Terminations :
- 2
- Continuous Collector Current :
- 50A
- Surface Mount :
- No
- Operating Temperature :
- -55°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 25A 5V
- Collector Emitter Saturation Voltage :
- 2.5V
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 2mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tray
- Polarity :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- Datasheets
- MJ11028G

NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole
MJ11028G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 500mA, 50A.A 50A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.
MJ11028G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11028G Applications
There are a lot of ON Semiconductor
MJ11028G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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