MJ11028
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- Mfr.Part #
- MJ11028
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 50A TO204
- Stock
- 590
- In Stock ：
- 590
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 300W
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 500mA, 50A
- Pin Count :
- 2
- Max Collector Current :
- 50A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 50A
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 2.5V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 2mA
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- PIN/PEG
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 50A
- Number of Terminations :
- 2
- Power Dissipation :
- 300mW
- Published :
- 2002
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~200°C TJ
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 50V
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 2
- Radiation Hardening :
- No
- Packaging :
- Tray
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 25A 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-204AE
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- NPN - Darlington
- Datasheets
- MJ11028
NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole
MJ11028G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 500mA, 50A.A 50A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.
MJ11028G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11028G Applications
There are a lot of ON Semiconductor
MJ11028G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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