MJ11028
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- Mfr.Part #
- MJ11028
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 50A TO204
- Stock
- 590
- In Stock ：
- 590
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Continuous Collector Current :
- 50A
- Surface Mount :
- No
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 500mA, 50A
- Max Power Dissipation :
- 300W
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Number of Pins :
- 2
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 2.5V
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- PIN/PEG
- Package / Case :
- TO-204AE
- Polarity :
- NPN
- Max Collector Current :
- 50A
- Mounting Type :
- Through Hole
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 50A
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e1
- Voltage - Rated DC :
- 50V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2002
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~200°C TJ
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 25A 5V
- Radiation Hardening :
- No
- Packaging :
- Tray
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 2mA
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MJ11028
NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole
MJ11028G Overview
In this device, the DC current gain is 1000 @ 25A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 500mA, 50A.A 50A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.
MJ11028G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11028G Applications
There are a lot of ON Semiconductor
MJ11028G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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