KSE803STU
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- Mfr.Part #
- KSE803STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126-3
- Stock
- 22,062
- In Stock ：
- 22,062
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Current - Collector (Ic) (Max) :
- 4A
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Current - Collector Cutoff (Max) :
- 100μA
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-126-3
- Power - Max :
- 40W
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Mounting Type :
- Through Hole
- Datasheets
- KSE803STU
NPN - Darlington 150°C TJ 100μA TO-225AA, TO-126-3 Tube Through Hole
KSE803STU Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-126-3.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
KSE803STU Features
the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the supplier device package of TO-126-3
KSE803STU Applications
There are a lot of ON Semiconductor
KSE803STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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