KSE800STU
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- Mfr.Part #
- KSE800STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126-3
- Stock
- 2,377
- In Stock ：
- 2,377
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Weight :
- 761mg
- Max Power Dissipation :
- 40W
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- hFE Min :
- 750
- Published :
- 2017
- Current Rating :
- 4A
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 4A
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Voltage - Rated DC :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 2.5V
- Current - Collector Cutoff (Max) :
- 100μA
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Pbfree Code :
- yes
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Datasheets
- KSE800STU
NPN - Darlington 150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
KSE800STU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 1.5A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 4A volts.
KSE800STU Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
KSE800STU Applications
There are a lot of ON Semiconductor
KSE800STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| KSE800S | onsemi | 18,475 | TRANS NPN DARL 60V 4A TO126-3 |
| KSE800STSSTU | onsemi | 34,413 | TRANS NPN DARL 60V 4A TO126-3 |
| KSE800STU | onsemi | 1,122 | TRANS NPN DARL 60V 4A TO126-3 |
| KSE801STU | onsemi | 8,048 | TRANS NPN DARL 60V 4A TO126-3 |
| KSE802STU | onsemi | 18,844 | TRANS NPN DARL 80V 4A TO126-3 |
| KSE803S | onsemi | 38,632 | TRANS NPN DARL 80V 4A TO126-3 |
| KSE803STU | onsemi | 22,062 | TRANS NPN DARL 80V 4A TO126-3 |
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