KSE800STSSTU
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- Mfr.Part #
- KSE800STSSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126-3
- Stock
- 34,413
- In Stock ：
- 34,413
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100μA
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Transistor Type :
- NPN - Darlington
- Current - Collector (Ic) (Max) :
- 4A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 40W
- Datasheets
- KSE800STSSTU
NPN - Darlington 150°C TJ 100μA TO-225AA, TO-126-3 Tube Through Hole
KSE800STSSTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.Device displays Collector Emitter Breakdown (60V maximal voltage).
KSE800STSSTU Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
KSE800STSSTU Applications
There are a lot of ON Semiconductor
KSE800STSSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| KSE800S | onsemi | 18,475 | TRANS NPN DARL 60V 4A TO126-3 |
| KSE800STU | onsemi | 2,377 | TRANS NPN DARL 60V 4A TO126-3 |
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| KSE803S | onsemi | 38,632 | TRANS NPN DARL 80V 4A TO126-3 |
| KSE803STU | onsemi | 22,062 | TRANS NPN DARL 80V 4A TO126-3 |
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