KSE801STU
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- Mfr.Part #
- KSE801STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126-3
- Stock
- 8,048
- In Stock ：
- 8,048
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Mounting Type :
- Through Hole
- Power - Max :
- 40W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 4A
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 100μA
- Package / Case :
- TO-225AA, TO-126-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Datasheets
- KSE801STU
NPN - Darlington 150°C TJ 100μA TO-225AA, TO-126-3 Tube Through Hole
KSE801STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.8V @ 40mA, 2A.Device displays Collector Emitter Breakdown (60V maximal voltage).
KSE801STU Features
the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 2.8V @ 40mA, 2A
KSE801STU Applications
There are a lot of ON Semiconductor
KSE801STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| KSE800S | onsemi | 18,475 | TRANS NPN DARL 60V 4A TO126-3 |
| KSE800STSSTU | onsemi | 34,413 | TRANS NPN DARL 60V 4A TO126-3 |
| KSE800STU | onsemi | 2,377 | TRANS NPN DARL 60V 4A TO126-3 |
| KSE800STU | onsemi | 1,122 | TRANS NPN DARL 60V 4A TO126-3 |
| KSE802STU | onsemi | 18,844 | TRANS NPN DARL 80V 4A TO126-3 |
| KSE803S | onsemi | 38,632 | TRANS NPN DARL 80V 4A TO126-3 |
| KSE803STU | onsemi | 22,062 | TRANS NPN DARL 80V 4A TO126-3 |
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