KSE800S

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Mfr.Part #
KSE800S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 60V 4A TO126-3
Stock
18,475
In Stock :
18,475

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Number of Terminations :
3
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Collector (Ic) (Max) :
4A
Surface Mount :
No
Number of Elements :
1
Polarity/Channel Type :
NPN
Transistor Type :
NPN - Darlington
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max (Abs) :
40W
JESD-609 Code :
e3
Power - Max :
40W
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Terminal Position :
Single
Pbfree Code :
yes
Packaging :
Bulk
Current - Collector Cutoff (Max) :
100μA
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) :
60V
Reach Compliance Code :
Compliant
Operating Temperature :
150°C TJ
Terminal Finish :
Tin (Sn)
Package / Case :
TO-225AA, TO-126-3
HTS Code :
8541.29.00.95
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Datasheets
KSE800S
Introducing Transistors - Bipolar (BJT) - Single onsemi KSE800S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, KSE800S pinout, KSE800S datasheet PDF, KSE800S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSE800S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSE800S


NPN - Darlington 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

KSE800S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.Device displays Collector Emitter Breakdown (60V maximal voltage).

KSE800S Features


the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A


KSE800S Applications


There are a lot of ON Semiconductor
KSE800S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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