KSE802STU
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- Mfr.Part #
- KSE802STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126-3
- Stock
- 18,844
- In Stock ：
- 18,844
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Power - Max :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Operating Temperature :
- 150°C TJ
- Supplier Device Package :
- TO-126-3
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Current - Collector (Ic) (Max) :
- 4A
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- KSE802STU
NPN - Darlington 150°C TJ 100μA TO-225AA, TO-126-3 Tube Through Hole
KSE802STU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 1.5A 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.TO-126-3 is the supplier device package for this product.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
KSE802STU Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the supplier device package of TO-126-3
KSE802STU Applications
There are a lot of ON Semiconductor
KSE802STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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