KSE182PWD
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- Mfr.Part #
- KSE182PWD
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A DIP
- Stock
- 9,679
- In Stock ：
- 9,679
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 500MHz
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 3A
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1.5W
- Datasheets
- KSE182PWD
NPN 150°C TJ 100nA ICBO Bulk
KSE182PWD Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.7V @ 600mA, 3A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
KSE182PWD Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 1.7V @ 600mA, 3A
KSE182PWD Applications
There are a lot of ON Semiconductor
KSE182PWD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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