KSE13003H1ASTU
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- Mfr.Part #
- KSE13003H1ASTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126-3
- Stock
- 20,035
- In Stock ：
- 20,035
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 700V
- Max Collector Current :
- 1.5A
- Power Dissipation :
- 20W
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 400V
- Gain Bandwidth Product :
- 4MHz
- hFE Min :
- 8
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 400V
- Transition Frequency :
- 4MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2008
- Pbfree Code :
- yes
- Current Rating :
- 1.5A
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Number of Pins :
- 3
- Frequency :
- 4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 9 @ 500mA 2V
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 20W
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 9V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 400V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Weight :
- 761mg
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSE13003
- Datasheets
- KSE13003H1ASTU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSE13003H1ASTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 9 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 3V @ 500mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 4MHz.A maximum collector current of 1.5A volts can be achieved.
KSE13003H1ASTU Features
the DC current gain for this device is 9 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSE13003H1ASTU Applications
There are a lot of ON Semiconductor
KSE13003H1ASTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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