KSE13003TH1ATU
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- Mfr.Part #
- KSE13003TH1ATU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO220-3
- Stock
- 7,943
- In Stock ：
- 7,943
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Power - Max :
- 20W
- Max Power Dissipation :
- 30W
- Polarity/Channel Type :
- NPN
- Published :
- 2002
- Length :
- 9.9mm
- Height :
- 14.2mm
- Gain Bandwidth Product :
- 4MHz
- Collector Emitter Breakdown Voltage :
- 400V
- Current Rating :
- 1.5A
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Collector Emitter Voltage (VCEO) :
- 400V
- Packaging :
- Tube
- Mount :
- Through Hole
- Power Dissipation :
- 30W
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Transition Frequency :
- 4MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 9V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 9 @ 500mA 2V
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 500mV
- Max Collector Current :
- 1.5A
- Width :
- 4.5mm
- Weight :
- 1.8g
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 400V
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Number of Terminations :
- 3
- Frequency :
- 4MHz
- Transistor Element Material :
- SILICON
- hFE Min :
- 8
- Collector Base Voltage (VCBO) :
- 700V
- Base Part Number :
- KSE13003
- Datasheets
- KSE13003TH1ATU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSE13003TH1ATU Overview
This device has a DC current gain of 9 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.5A.In this part, there is a transition frequency of 4MHz.The maximum collector current is 1.5A volts.
KSE13003TH1ATU Features
the DC current gain for this device is 9 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSE13003TH1ATU Applications
There are a lot of ON Semiconductor
KSE13003TH1ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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