KSE13003TH2ATU

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Mfr.Part #
KSE13003TH2ATU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 1.5A TO220-3
Stock
30,730
In Stock :
30,730

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Transistor Type :
NPN
Reach Compliance Code :
Unknown
Transition Frequency :
4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
14 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic :
3V @ 500mA, 1.5A
Peak Reflow Temperature (Cel) :
Not Applicable
Operating Temperature :
150°C TJ
Configuration :
Single
Power - Max :
20W
Terminal Finish :
MATTE TIN
JESD-609 Code :
e3
Voltage - Collector Emitter Breakdown (Max) :
400V
Qualification Status :
COMMERCIAL
Number of Elements :
1
Surface Mount :
No
Pbfree Code :
yes
Current - Collector (Ic) (Max) :
1.5A
JESD-30 Code :
R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-126
Terminal Position :
Single
Frequency - Transition :
4MHz
Polarity/Channel Type :
NPN
Transistor Application :
SWITCHING
Package / Case :
TO-220-3
Datasheets
KSE13003TH2ATU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSE13003TH2ATU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, KSE13003TH2ATU pinout, KSE13003TH2ATU datasheet PDF, KSE13003TH2ATU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSE13003TH2ATU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSE13003TH2ATU


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSE13003TH2ATU Overview


In this device, the DC current gain is 14 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 500mA, 1.5A.4MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 400V.

KSE13003TH2ATU Features


the DC current gain for this device is 14 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
a transition frequency of 4MHz


KSE13003TH2ATU Applications


There are a lot of Rochester Electronics, LLC
KSE13003TH2ATU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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