KSE13003H2ASTU
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- Mfr.Part #
- KSE13003H2ASTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126-3
- Stock
- 28,415
- In Stock ：
- 28,415
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- hFE Min :
- 8
- Width :
- 3.25mm
- Radiation Hardening :
- No
- Current Rating :
- 1.5A
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Transition Frequency :
- 4MHz
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 4MHz
- Number of Elements :
- 1
- Published :
- 2008
- Weight :
- 761mg
- Packaging :
- Tube
- Voltage - Rated DC :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Collector Emitter Saturation Voltage :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 400V
- Collector Emitter Voltage (VCEO) :
- 400V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 20W
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Max Collector Current :
- 1.5A
- Max Power Dissipation :
- 20W
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 9V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Height :
- 11mm
- Polarity/Channel Type :
- NPN
- Frequency :
- 4MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Length :
- 8mm
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- KSE13003
- Datasheets
- KSE13003H2ASTU
KSE13003H2ASTU Documents
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSE13003H2ASTU Overview
This device has a DC current gain of 14 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 3V @ 500mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 1.5A volts is possible.
KSE13003H2ASTU Features
the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSE13003H2ASTU Applications
There are a lot of ON Semiconductor
KSE13003H2ASTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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