KSE13003H3ASTU

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Mfr.Part #
KSE13003H3ASTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 400V 1.5A TO126-3
Stock
1,943
In Stock :
1,943

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-225AA, TO-126-3
JESD-30 Code :
R-PSFM-T3
Qualification Status :
COMMERCIAL
Configuration :
Single
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
400V
Transistor Type :
NPN
Power - Max :
20W
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
3V @ 500mA, 1.5A
Pin Count :
3
Packaging :
Tube
Transistor Application :
SWITCHING
Surface Mount :
No
Number of Elements :
1
Transistor Element Material :
SILICON
Terminal Position :
Single
Frequency - Transition :
4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
19 @ 500mA 2V
Transition Frequency :
4MHz
Current - Collector (Ic) (Max) :
1.5A
Polarity/Channel Type :
NPN
Datasheets
KSE13003H3ASTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSE13003H3ASTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, KSE13003H3ASTU pinout, KSE13003H3ASTU datasheet PDF, KSE13003H3ASTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSE13003H3ASTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSE13003H3ASTU


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

KSE13003H3ASTU Overview


This device has a DC current gain of 19 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 500mA, 1.5A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 4MHz.Collector Emitter Breakdown occurs at 400VV - Maximum voltage.

KSE13003H3ASTU Features


the DC current gain for this device is 19 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
a transition frequency of 4MHz


KSE13003H3ASTU Applications


There are a lot of Rochester Electronics, LLC
KSE13003H3ASTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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