KSE181STU
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- Mfr.Part #
- KSE181STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO126-3
- Stock
- 10,771
- In Stock ：
- 10,771
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 600mA, 3A
- Power - Max :
- 1.5W
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Package / Case :
- TO-225AA, TO-126-3
- Frequency - Transition :
- 50MHz
- Current - Collector (Ic) (Max) :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Datasheets
- KSE181STU
NPN 100nA ICBO TO-225AA, TO-126-3 Tube Through Hole
KSE181STU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 1V.When VCE saturation is 1.7V @ 600mA, 3A, transistor means Ic has reached transistors maximum value (saturated).The device has a 60V maximal voltage - Collector Emitter Breakdown.
KSE181STU Features
the DC current gain for this device is 50 @ 100mA 1V
the vce saturation(Max) is 1.7V @ 600mA, 3A
KSE181STU Applications
There are a lot of ON Semiconductor
KSE181STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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