KSD363YTU
- Mfr.Part #
- KSD363YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 6A TO220-3
- Stock
- 4,505
- In Stock :
- 4,505
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 6A
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Voltage - Rated DC :
- 120V
- Number of Terminations :
- 3
- Current Rating :
- 6A
- Factory Lead Time :
- 4 Weeks
- Mount :
- Through Hole
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Weight :
- 1.8g
- Number of Elements :
- 1
- Number of Pins :
- 3
- Published :
- 2000
- hFE Min :
- 40
- Transition Frequency :
- 10MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 5V
- Base Part Number :
- KSD363
- Collector Emitter Voltage (VCEO) :
- 120V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Emitter Base Voltage (VEBO) :
- 8V
- Collector Emitter Breakdown Voltage :
- 120V
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 10MHz
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 300V
- Power Dissipation :
- 40W
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 40W
- Frequency :
- 10MHz
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Datasheets
- KSD363YTU

NPN 150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSD363YTU Overview
In this device, the DC current gain is 120 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100mA, 1A.Keeping the emitter base voltage at 8V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (6A).10MHz is present in the transition frequency.Maximum collector currents can be below 6A volts.
KSD363YTU Features
the DC current gain for this device is 120 @ 1A 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is 6A
a transition frequency of 10MHz
KSD363YTU Applications
There are a lot of ON Semiconductor
KSD363YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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