KSD363YTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Mounting Type :

Through Hole

Radiation Hardening :

No

Base Part Number :

KSD363

Vce Saturation (Max) @ Ib, Ic :

1V @ 100mA, 1A

Published :

2000

Transistor Element Material :

SILICON

Number of Terminations :

3

Transistor Type :

NPN

hFE Min :

40

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transition Frequency :

10MHz

Collector Base Voltage (VCBO) :

300V

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

120V

Power Dissipation :

40W

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Emitter Base Voltage (VEBO) :

8V

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Weight :

1.8g

Current - Collector Cutoff (Max) :

1mA ICBO

Polarity/Channel Type :

NPN

Pbfree Code :

yes

Mount :

Through Hole

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1A 5V

Collector Emitter Breakdown Voltage :

120V

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Gain Bandwidth Product :

10MHz

Current Rating :

6A

Voltage - Rated DC :

120V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Frequency :

10MHz

Max Power Dissipation :

40W

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Max Collector Current :

6A