KSD362N
- Mfr.Part #
- KSD362N
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 70V 5A TO220-3
- Stock
- 35,366
- In Stock :
- 35,366
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 5V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 20μA ICBO
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 10MHz
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 5A
- Voltage - Collector Emitter Breakdown (Max) :
- 70V
- JESD-30 Code :
- R-PSFM-T3
- Frequency - Transition :
- 10MHz
- Power - Max :
- 40W
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Transistor Application :
- AMPLIFIER
- Datasheets
- KSD362N

NPN 150°C TJ 20μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
KSD362N Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 5A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 5A.Parts of this part have transition frequencies of 10MHz.This device displays a 70V maximum voltage - Collector Emitter Breakdown.
KSD362N Features
the DC current gain for this device is 20 @ 5A 5V
the vce saturation(Max) is 1V @ 500mA, 5A
a transition frequency of 10MHz
KSD362N Applications
There are a lot of ON Semiconductor
KSD362N applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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