KSD363R

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

16 Weeks

Number of Elements :

1

Collector Emitter Breakdown Voltage :

120V

Vce Saturation (Max) @ Ib, Ic :

1V @ 100mA, 1A

Power Dissipation :

40W

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

6A

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Height :

14.2mm

Collector Emitter Saturation Voltage :

1V

Max Collector Current :

6A

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

300V

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Weight :

1.8g

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Mount :

Through Hole

Published :

2000

Transistor Type :

NPN

Width :

4.5mm

hFE Min :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1A 5V

Lead Free :

Lead Free

Frequency :

10MHz

Voltage - Rated DC :

120V

Operating Temperature :

150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Polarity/Channel Type :

NPN

Length :

9.9mm

Gain Bandwidth Product :

10MHz

Transistor Element Material :

SILICON

Max Power Dissipation :

40W

Number of Terminations :

3

Packaging :

Tube

Mounting Type :

Through Hole

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

8V

Base Part Number :

KSD363

Transition Frequency :

10MHz

Current - Collector Cutoff (Max) :

1mA ICBO

Collector Emitter Voltage (VCEO) :

120V