KSD363RTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

1V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Transition Frequency :

10MHz

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Transistor Type :

NPN

Weight :

1.8g

Mount :

Through Hole

Power Dissipation :

40W

Current - Collector Cutoff (Max) :

1mA ICBO

Base Part Number :

KSD363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

6A

Package / Case :

TO-220-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1A 5V

Voltage - Rated DC :

120V

Collector Emitter Voltage (VCEO) :

120V

Pbfree Code :

yes

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Radiation Hardening :

No

Height :

14.2mm

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Length :

9.9mm

Mounting Type :

Through Hole

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

300V

Collector Emitter Breakdown Voltage :

120V

Packaging :

Tube

Width :

4.5mm

hFE Min :

40

Max Power Dissipation :

40W

Gain Bandwidth Product :

10MHz

Max Collector Current :

6A

Number of Pins :

3

Emitter Base Voltage (VEBO) :

8V

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

1V @ 100mA, 1A

Frequency :

10MHz

Published :

2000

RoHS Status :

ROHS3 Compliant