KSD363Y
- Mfr.Part #
- KSD363Y
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 6A TO220-3
- Stock
- 24,186
- In Stock :
- 24,186
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 6A
- JEDEC-95 Code :
- TO-220AB
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PSFM-T3
- Surface Mount :
- No
- Transition Frequency :
- 10MHz
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- Frequency - Transition :
- 10MHz
- Number of Elements :
- 1
- Terminal Position :
- Single
- Reach Compliance Code :
- Compliant
- Power - Max :
- 40W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 5V
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- KSD363
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Package / Case :
- TO-220-3
- Datasheets
- KSD363Y

NPN 150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
KSD363Y Overview
This device has a DC current gain of 120 @ 1A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 10MHz.Detection of Collector Emitter Breakdown at 120V maximal voltage is present.
KSD363Y Features
the DC current gain for this device is 120 @ 1A 5V
the vce saturation(Max) is 1V @ 100mA, 1A
a transition frequency of 10MHz
KSD363Y Applications
There are a lot of ON Semiconductor
KSD363Y applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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