KSD363R
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- Mfr.Part #
- KSD363R
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 6A TO220-3
- Stock
- 16,800
- In Stock ：
- 16,800
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 8V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- KSD363
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 120V
- Height :
- 14.2mm
- Length :
- 9.9mm
- Current Rating :
- 6A
- Number of Terminations :
- 3
- Factory Lead Time :
- 16 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 40W
- Voltage - Rated DC :
- 120V
- Power Dissipation :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 5V
- Width :
- 4.5mm
- Collector Emitter Saturation Voltage :
- 1V
- Max Collector Current :
- 6A
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 120V
- Collector Base Voltage (VCBO) :
- 300V
- Published :
- 2000
- Gain Bandwidth Product :
- 10MHz
- hFE Min :
- 40
- Packaging :
- Tube
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Weight :
- 1.8g
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Frequency :
- 10MHz
- Mount :
- Through Hole
- Transition Frequency :
- 10MHz
- Transistor Element Material :
- SILICON
- Datasheets
- KSD363R
NPN 150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSD363RTU Overview
In this device, the DC current gain is 40 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100mA, 1A.Keeping the emitter base voltage at 8V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (6A).10MHz is present in the transition frequency.Maximum collector currents can be below 6A volts.
KSD363RTU Features
the DC current gain for this device is 40 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is 6A
a transition frequency of 10MHz
KSD363RTU Applications
There are a lot of ON Semiconductor
KSD363RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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