KSC5603DTU
- Mfr.Part #
- KSC5603DTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220-3
- Stock
- 3,489
- In Stock :
- 3,489
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 5MHz
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 1.6kV
- Published :
- 2013
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 200μA, 1A
- Mount :
- Through Hole
- hFE Min :
- 20
- Collector Emitter Breakdown Voltage :
- 800V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 5MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 400mA 3V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 800V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 800V
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 3A
- Packaging :
- Tube
- Weight :
- 1.8g
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 100W
- Current - Collector Cutoff (Max) :
- 100μA
- Power Dissipation :
- 100W
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Current Rating :
- 3A
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- ECCN Code :
- EAR99
- Transition Frequency :
- 11MHz
- Datasheets
- KSC5603DTU

NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5603DTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 400mA 3V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 200μA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 11MHz.A maximum collector current of 3A volts can be achieved.
KSC5603DTU Features
the DC current gain for this device is 20 @ 400mA 3V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 2.5V @ 200μA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 3A
a transition frequency of 11MHz
KSC5603DTU Applications
There are a lot of ON Semiconductor
KSC5603DTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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