KSC5603DTU

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Mfr.Part #
KSC5603DTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 800V 3A TO220-3
Stock
3,489
In Stock :
3,489

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency :
5MHz
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
1.6kV
Published :
2013
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Polarity/Channel Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 200μA, 1A
Mount :
Through Hole
hFE Min :
20
Collector Emitter Breakdown Voltage :
800V
Radiation Hardening :
No
Gain Bandwidth Product :
5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 400mA 3V
Transistor Type :
NPN
Voltage - Rated DC :
800V
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
800V
Terminal Finish :
Tin (Sn)
Max Collector Current :
3A
Packaging :
Tube
Weight :
1.8g
JESD-609 Code :
e3
Element Configuration :
Single
Transistor Application :
SWITCHING
Max Power Dissipation :
100W
Current - Collector Cutoff (Max) :
100μA
Power Dissipation :
100W
Number of Pins :
3
Collector Emitter Saturation Voltage :
500mV
Current Rating :
3A
Lead Free :
Lead Free
Package / Case :
TO-220-3
Emitter Base Voltage (VEBO) :
12V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
16 Weeks
ECCN Code :
EAR99
Transition Frequency :
11MHz
Datasheets
KSC5603DTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5603DTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-220-3, KSC5603DTU pinout, KSC5603DTU datasheet PDF, KSC5603DTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5603DTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5603DTU


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5603DTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 400mA 3V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 200μA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 11MHz.A maximum collector current of 3A volts can be achieved.

KSC5603DTU Features


the DC current gain for this device is 20 @ 400mA 3V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 2.5V @ 200μA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 3A
a transition frequency of 11MHz


KSC5603DTU Applications


There are a lot of ON Semiconductor
KSC5603DTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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