KSC5019MTA
- Mfr.Part #
- KSC5019MTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 10V 2A TO92-3
- Stock
- 1,288
- In Stock :
- 1,288
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 10V
- Mount :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Transition Frequency :
- 150MHz
- Gain Bandwidth Product :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Max Collector Current :
- 2A
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 1V
- hFE Min :
- 140
- Length :
- 4.58mm
- Max Power Dissipation :
- 750mW
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 10V
- Factory Lead Time :
- 7 Weeks
- Current Rating :
- 2A
- Polarity/Channel Type :
- NPN
- Published :
- 2002
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 10V
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 10V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 750mW
- Terminal Finish :
- Tin (Sn)
- Width :
- 3.86mm
- Frequency :
- 150MHz
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Height :
- 4.58mm
- Radiation Hardening :
- No
- Weight :
- 240mg
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 2A
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Base Part Number :
- KSC5019
- Datasheets
- KSC5019MTA

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC5019MTA Overview
In this device, the DC current gain is 140 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).150MHz is present in the transition frequency.An input voltage of 10V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
KSC5019MTA Features
the DC current gain for this device is 140 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 150MHz
KSC5019MTA Applications
There are a lot of ON Semiconductor
KSC5019MTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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