KSC5019MTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 500mA 1V

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

750mW

Packaging :

Tape and Box (TB)

Emitter Base Voltage (VEBO) :

6V

Length :

4.58mm

hFE Min :

140

Lead Free :

Lead Free

Weight :

240mg

Frequency :

150MHz

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

10V

Mount :

Through Hole

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Current Rating :

2A

Number of Terminations :

3

Transition Frequency :

150MHz

Published :

2002

Max Collector Current :

2A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Collector Emitter Saturation Voltage :

500mV

Width :

3.86mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

10V

Number of Elements :

1

Pbfree Code :

yes

JESD-609 Code :

e3

Base Part Number :

KSC5019

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 2A

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

30V

Max Breakdown Voltage :

10V

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

10V

Gain Bandwidth Product :

150MHz

Height :

4.58mm

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

750mW

Factory Lead Time :

7 Weeks

Radiation Hardening :

No

Terminal Position :

BOTTOM

Number of Pins :

3