KSC5019MTA
- Mfr.Part #
- KSC5019MTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 10V 2A TO92-3
- Stock
- 1,288
- In Stock :
- 1,288
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.86mm
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 500mV
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Collector Base Voltage (VCBO) :
- 30V
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 2A
- Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Base Part Number :
- KSC5019
- Power Dissipation :
- 750mW
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2002
- Height :
- 4.58mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 7 Weeks
- Weight :
- 240mg
- hFE Min :
- 140
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 10V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 10V
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 750mW
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 10V
- Number of Pins :
- 3
- Transition Frequency :
- 150MHz
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 1V
- Gain Bandwidth Product :
- 150MHz
- Transistor Element Material :
- SILICON
- Current Rating :
- 2A
- Length :
- 4.58mm
- Datasheets
- KSC5019MTA
KSC5019MTA Documents

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC5019MTA Overview
In this device, the DC current gain is 140 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).150MHz is present in the transition frequency.An input voltage of 10V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
KSC5019MTA Features
the DC current gain for this device is 140 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 150MHz
KSC5019MTA Applications
There are a lot of ON Semiconductor
KSC5019MTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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