KSC5021RTU
- Mfr.Part #
- KSC5021RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 5A TO220-3
- Stock
- 9,687
- In Stock :
- 9,687
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Collector Emitter Voltage (VCEO) :
- 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 600mA 5V
- Published :
- 2013
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 600mA, 3A
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 500V
- Pbfree Code :
- yes
- Frequency :
- 18MHz
- Additional Feature :
- High Reliability
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- hFE Min :
- 15
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 800V
- Transition Frequency :
- 18MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Weight :
- 1.8g
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- Power Dissipation :
- 50W
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 50W
- Emitter Base Voltage (VEBO) :
- 7V
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 5A
- Packaging :
- Tube
- Gain Bandwidth Product :
- 18MHz
- Package / Case :
- TO-220-3
- Datasheets
- KSC5021RTU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5021RTU Overview
This device has a DC current gain of 15 @ 600mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 18MHz.The maximum collector current is 5A volts.
KSC5021RTU Features
the DC current gain for this device is 15 @ 600mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 600mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 18MHz
KSC5021RTU Applications
There are a lot of ON Semiconductor
KSC5021RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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