KSC5021RTU

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Mfr.Part #
KSC5021RTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 500V 5A TO220-3
Stock
9,687
In Stock :
9,687

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 1 week ago)
Collector Emitter Voltage (VCEO) :
500V
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 600mA 5V
Published :
2013
Vce Saturation (Max) @ Ib, Ic :
1V @ 600mA, 3A
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
500V
Pbfree Code :
yes
Frequency :
18MHz
Additional Feature :
High Reliability
Polarity/Channel Type :
NPN
JESD-609 Code :
e3
hFE Min :
15
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
800V
Transition Frequency :
18MHz
Current - Collector Cutoff (Max) :
10μA ICBO
Weight :
1.8g
Transistor Application :
SWITCHING
Number of Pins :
3
Collector Emitter Saturation Voltage :
1V
Power Dissipation :
50W
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Number of Elements :
1
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Mount :
Through Hole
Element Configuration :
Single
Transistor Element Material :
SILICON
Max Power Dissipation :
50W
Emitter Base Voltage (VEBO) :
7V
JEDEC-95 Code :
TO-220AB
Max Collector Current :
5A
Packaging :
Tube
Gain Bandwidth Product :
18MHz
Package / Case :
TO-220-3
Datasheets
KSC5021RTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5021RTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, KSC5021RTU pinout, KSC5021RTU datasheet PDF, KSC5021RTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5021RTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5021RTU


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5021RTU Overview


This device has a DC current gain of 15 @ 600mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 18MHz.The maximum collector current is 5A volts.

KSC5021RTU Features


the DC current gain for this device is 15 @ 600mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 600mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 18MHz


KSC5021RTU Applications


There are a lot of ON Semiconductor
KSC5021RTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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