KSC5019MTA
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- Mfr.Part #
- KSC5019MTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 10V 2A TO92-3
- Stock
- 1,371
- In Stock ：
- 1,371
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Factory Lead Time :
- 7 Weeks
- Voltage - Rated DC :
- 10V
- Element Configuration :
- Single
- Power Dissipation :
- 750mW
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 10V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- hFE Min :
- 140
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 10V
- Pbfree Code :
- yes
- Width :
- 3.86mm
- ECCN Code :
- EAR99
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Current Rating :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 1V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Base Part Number :
- KSC5019
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 10V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 2A
- Published :
- 2002
- Max Power Dissipation :
- 750mW
- Weight :
- 240mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Height :
- 4.58mm
- Length :
- 4.58mm
- Gain Bandwidth Product :
- 150MHz
- Datasheets
- KSC5019MTA
KSC5019MTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC5019MTA Overview
In this device, the DC current gain is 140 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).150MHz is present in the transition frequency.An input voltage of 10V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
KSC5019MTA Features
the DC current gain for this device is 140 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 150MHz
KSC5019MTA Applications
There are a lot of ON Semiconductor
KSC5019MTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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