KSC5019MTA
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- Mfr.Part #
- KSC5019MTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 10V 2A TO92-3
- Stock
- 1,371
- In Stock ：
- 1,371
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 2A
- Published :
- 2002
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 240mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 750mW
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Power Dissipation :
- 750mW
- ECCN Code :
- EAR99
- hFE Min :
- 140
- Max Breakdown Voltage :
- 10V
- Current Rating :
- 2A
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 10V
- Mount :
- Through Hole
- Factory Lead Time :
- 7 Weeks
- Width :
- 3.86mm
- Height :
- 4.58mm
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 10V
- Max Collector Current :
- 2A
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 1V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 10V
- Frequency :
- 150MHz
- Length :
- 4.58mm
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Transition Frequency :
- 150MHz
- Base Part Number :
- KSC5019
- Packaging :
- Tape and Box (TB)
- Datasheets
- KSC5019MTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC5019MTA Overview
In this device, the DC current gain is 140 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).150MHz is present in the transition frequency.An input voltage of 10V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
KSC5019MTA Features
the DC current gain for this device is 140 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 150MHz
KSC5019MTA Applications
There are a lot of ON Semiconductor
KSC5019MTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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