KSC5030FRTU

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Mfr.Part #
KSC5030FRTU
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
TRANS NPN 800V 6A TO3PF
Stock
6,991
In Stock :
6,991

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Package / Case :
TO-3P-3 Full Pack
Supplier Device Package :
TO-3PF
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) :
800V
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Current - Collector Cutoff (Max) :
10μA ICBO
Vce Saturation (Max) @ Ib, Ic :
2V @ 600mA, 3A
Current - Collector (Ic) (Max) :
6A
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 600mA 5V
Mounting Type :
Through Hole
Power - Max :
60W
Datasheets
KSC5030FRTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5030FRTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3 Full Pack, Mounting Type:Through Hole, KSC5030FRTU pinout, KSC5030FRTU datasheet PDF, KSC5030FRTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5030FRTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5030FRTU


NPN 10μA ICBO TO-3P-3 Full Pack Tube Through Hole

KSC5030FRTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 600mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 600mA, 3A.The product comes in the supplier device package of TO-3PF.A 800V maximal voltage - Collector Emitter Breakdown is present in the device.

KSC5030FRTU Features


the DC current gain for this device is 10 @ 600mA 5V
the vce saturation(Max) is 2V @ 600mA, 3A
the supplier device package of TO-3PF


KSC5030FRTU Applications


There are a lot of Rochester Electronics, LLC
KSC5030FRTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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