KSC5026MOS
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- Mfr.Part #
- KSC5026MOS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 1.5A TO126-3
- Stock
- 992
- In Stock ：
- 992
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 800V
- Weight :
- 761mg
- Collector Emitter Voltage (VCEO) :
- 800V
- JESD-609 Code :
- e3
- Max Collector Current :
- 1.5A
- Max Power Dissipation :
- 20W
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Published :
- 2006
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 15MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 150mA, 750mA
- Collector Emitter Breakdown Voltage :
- 800V
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 20W
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 5V
- Number of Elements :
- 1
- Package / Case :
- TO-225AA, TO-126-3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Frequency :
- 15MHz
- Additional Feature :
- High Reliability
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- hFE Min :
- 10
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Current Rating :
- 1.5A
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Pins :
- 3
- Factory Lead Time :
- 7 Weeks
- Collector Base Voltage (VCBO) :
- 1.1kV
- Transition Frequency :
- 15MHz
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Datasheets
- KSC5026MOS
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
KSC5026MOS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 150mA, 750mA.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
KSC5026MOS Features
the DC current gain for this device is 20 @ 100mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 150mA, 750mA
the emitter base voltage is kept at 7V
the current rating of this device is 1.5A
a transition frequency of 15MHz
KSC5026MOS Applications
There are a lot of ON Semiconductor
KSC5026MOS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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