KSC5026MOS
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- Mfr.Part #
- KSC5026MOS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 1.5A TO126-3
- Stock
- 992
- In Stock ：
- 992
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Transition Frequency :
- 15MHz
- Voltage - Rated DC :
- 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 5V
- Max Collector Current :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 20W
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-225AA, TO-126-3
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 2V
- Additional Feature :
- High Reliability
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 1.1kV
- Frequency :
- 15MHz
- Packaging :
- Bulk
- Published :
- 2006
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 800V
- Gain Bandwidth Product :
- 15MHz
- Weight :
- 761mg
- hFE Min :
- 10
- Current Rating :
- 1.5A
- Factory Lead Time :
- 7 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 150mA, 750mA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Power Dissipation :
- 20W
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 800V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- ECCN Code :
- EAR99
- Datasheets
- KSC5026MOS
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
KSC5026MOS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 150mA, 750mA.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
KSC5026MOS Features
the DC current gain for this device is 20 @ 100mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 150mA, 750mA
the emitter base voltage is kept at 7V
the current rating of this device is 1.5A
a transition frequency of 15MHz
KSC5026MOS Applications
There are a lot of ON Semiconductor
KSC5026MOS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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