KSC5027OTU
- Mfr.Part #
- KSC5027OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220-3
- Stock
- 23,836
- In Stock :
- 23,836
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 15MHz
- JESD-609 Code :
- e3
- Additional Feature :
- High Reliability
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 50W
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Height :
- 18.95mm
- Transistor Element Material :
- SILICON
- Width :
- 4.5mm
- Max Power Dissipation :
- 50W
- Collector Emitter Voltage (VCEO) :
- 800V
- Length :
- 9.9mm
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Collector Emitter Breakdown Voltage :
- 800V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Qualification Status :
- Not Qualified
- Published :
- 2001
- Weight :
- 1.8g
- Emitter Base Voltage (VEBO) :
- 7V
- Frequency :
- 15MHz
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 3A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 15MHz
- Number of Elements :
- 1
- Voltage - Rated DC :
- 800V
- Collector Emitter Saturation Voltage :
- 2V
- hFE Min :
- 10
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 1.1kV
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 3A
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Datasheets
- KSC5027OTU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5027OTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 200mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 300mA, 1.5A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
KSC5027OTU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
KSC5027OTU Applications
There are a lot of ON Semiconductor
KSC5027OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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