KSC5027OTU
- Mfr.Part #
- KSC5027OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220-3
- Stock
- 23,836
- In Stock :
- 23,836
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- Max Collector Current :
- 3A
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Emitter Base Voltage (VEBO) :
- 7V
- Polarity/Channel Type :
- NPN
- Frequency :
- 15MHz
- Qualification Status :
- Not Qualified
- Current Rating :
- 3A
- Transition Frequency :
- 15MHz
- Packaging :
- Tube
- Additional Feature :
- High Reliability
- Collector Emitter Voltage (VCEO) :
- 800V
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 2V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Max Power Dissipation :
- 50W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 1.1kV
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 800V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 15MHz
- Mount :
- Through Hole
- hFE Min :
- 10
- Mounting Type :
- Through Hole
- Height :
- 18.95mm
- Transistor Element Material :
- SILICON
- Width :
- 4.5mm
- Length :
- 9.9mm
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Weight :
- 1.8g
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 50W
- Published :
- 2001
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- KSC5027OTU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5027OTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 200mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 300mA, 1.5A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
KSC5027OTU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
KSC5027OTU Applications
There are a lot of ON Semiconductor
KSC5027OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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