KSC5502TU
- Mfr.Part #
- KSC5502TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 600V 2A TO220-3
- Stock
- 17,301
- In Stock :
- 17,301
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 12V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 50W
- Max Frequency :
- 1MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 500mA 2.5V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 1A
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 600V
- Collector Emitter Saturation Voltage :
- 3V
- Current - Collector Cutoff (Max) :
- 100μA
- Base Part Number :
- KSC5502
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- Collector Base Voltage (VCBO) :
- 1.2kV
- hFE Min :
- 12
- Length :
- 10.67mm
- Max Power Dissipation :
- 50W
- Terminal Finish :
- Tin (Sn)
- Weight :
- 1.8g
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 5 Weeks
- Polarity/Channel Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 2A
- Operating Temperature :
- 150°C TJ
- Width :
- 4.83mm
- Height :
- 9.4mm
- Packaging :
- Tube
- Radiation Hardening :
- No
- Published :
- 2013
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 600V
- Datasheets
- KSC5502TU

NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5502TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 12 @ 500mA 2.5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
KSC5502TU Features
the DC current gain for this device is 12 @ 500mA 2.5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
KSC5502TU Applications
There are a lot of ON Semiconductor
KSC5502TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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