KSC5502TU

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Mfr.Part #
KSC5502TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 600V 2A TO220-3
Stock
17,301
In Stock :
17,301

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
12V
Transistor Application :
SWITCHING
Power Dissipation :
50W
Max Frequency :
1MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
12 @ 500mA 2.5V
Mount :
Through Hole
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 200mA, 1A
Number of Terminations :
3
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
600V
Collector Emitter Saturation Voltage :
3V
Current - Collector Cutoff (Max) :
100μA
Base Part Number :
KSC5502
Transistor Element Material :
SILICON
Pbfree Code :
yes
Package / Case :
TO-220-3
Collector Base Voltage (VCBO) :
1.2kV
hFE Min :
12
Length :
10.67mm
Max Power Dissipation :
50W
Terminal Finish :
Tin (Sn)
Weight :
1.8g
Lead Free :
Lead Free
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
JESD-609 Code :
e3
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
5 Weeks
Polarity/Channel Type :
NPN
JEDEC-95 Code :
TO-220AB
Max Collector Current :
2A
Operating Temperature :
150°C TJ
Width :
4.83mm
Height :
9.4mm
Packaging :
Tube
Radiation Hardening :
No
Published :
2013
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
600V
Datasheets
KSC5502TU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5502TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:KSC5502, Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, KSC5502TU pinout, KSC5502TU datasheet PDF, KSC5502TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5502TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5502TU


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5502TU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 12 @ 500mA 2.5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.

KSC5502TU Features


the DC current gain for this device is 12 @ 500mA 2.5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V


KSC5502TU Applications


There are a lot of ON Semiconductor
KSC5502TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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