KSC5502TU
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- Mfr.Part #
- KSC5502TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 600V 2A TO220-3
- Stock
- 37,265
- In Stock ：
- 37,265
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 100μA
- Max Frequency :
- 1MHz
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 600V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 600V
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Factory Lead Time :
- 5 Weeks
- Height :
- 9.4mm
- Weight :
- 1.8g
- Length :
- 10.67mm
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Base Part Number :
- KSC5502
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Emitter Saturation Voltage :
- 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Power Dissipation :
- 50W
- Published :
- 2013
- Collector Base Voltage (VCBO) :
- 1.2kV
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 12
- Max Power Dissipation :
- 50W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 500mA 2.5V
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Width :
- 4.83mm
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 1A
- Datasheets
- KSC5502TU
KSC5502TU Documents
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5502TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 12 @ 500mA 2.5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
KSC5502TU Features
the DC current gain for this device is 12 @ 500mA 2.5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
KSC5502TU Applications
There are a lot of ON Semiconductor
KSC5502TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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