KSC5502TU
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- Mfr.Part #
- KSC5502TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 600V 2A TO220-3
- Stock
- 37,265
- In Stock ：
- 37,265
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 500mA 2.5V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100μA
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 50W
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 1A
- Length :
- 10.67mm
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 12
- Max Frequency :
- 1MHz
- Collector Emitter Breakdown Voltage :
- 600V
- Polarity/Channel Type :
- NPN
- Height :
- 9.4mm
- Width :
- 4.83mm
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 2A
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Factory Lead Time :
- 5 Weeks
- Published :
- 2013
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 3V
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 600V
- Weight :
- 1.8g
- Packaging :
- Tube
- Power Dissipation :
- 50W
- Base Part Number :
- KSC5502
- Collector Base Voltage (VCBO) :
- 1.2kV
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Datasheets
- KSC5502TU
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5502TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 12 @ 500mA 2.5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
KSC5502TU Features
the DC current gain for this device is 12 @ 500mA 2.5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
KSC5502TU Applications
There are a lot of ON Semiconductor
KSC5502TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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