KSC5502DTTU
- Mfr.Part #
- KSC5502DTTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 600V 2A TO220-3
- Stock
- 4,133
- In Stock :
- 4,133
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.29.00.95
- JESD-609 Code :
- e3
- Factory Lead Time :
- 2 Weeks
- Gain Bandwidth Product :
- 11MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 600V
- Current - Collector Cutoff (Max) :
- 100μA
- ECCN Code :
- EAR99
- Max Collector Current :
- 2A
- Package / Case :
- TO-220-3
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 1A
- Number of Terminations :
- 3
- hFE Min :
- 12
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 600V
- Base Part Number :
- KSC5502
- Transition Frequency :
- 11MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Pins :
- 3
- Weight :
- 1.8g
- Element Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 2A
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 1.2kV
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Max Power Dissipation :
- 50W
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4 @ 1A 1V
- Datasheets
- KSC5502DTTU

NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5502DTTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4 @ 1A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Parts of this part have transition frequencies of 11MHz.During maximum operation, collector current can be as low as 2A volts.
KSC5502DTTU Features
the DC current gain for this device is 4 @ 1A 1V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 11MHz
KSC5502DTTU Applications
There are a lot of ON Semiconductor
KSC5502DTTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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