KSC5502DTTU
- Mfr.Part #
- KSC5502DTTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 600V 2A TO220-3
- Stock
- 4,133
- In Stock :
- 4,133
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 2 Weeks
- Current - Collector (Ic) (Max) :
- 2A
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Power Dissipation :
- 50W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gain Bandwidth Product :
- 11MHz
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Mount :
- Through Hole
- HTS Code :
- 8541.29.00.95
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Terminations :
- 3
- Base Part Number :
- KSC5502
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4 @ 1A 1V
- Max Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- 1.2kV
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 600V
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 12V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- hFE Min :
- 12
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 1.8g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 11MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 1A
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 600V
- Published :
- 2013
- JESD-609 Code :
- e3
- Datasheets
- KSC5502DTTU

NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5502DTTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4 @ 1A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Parts of this part have transition frequencies of 11MHz.During maximum operation, collector current can be as low as 2A volts.
KSC5502DTTU Features
the DC current gain for this device is 4 @ 1A 1V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 11MHz
KSC5502DTTU Applications
There are a lot of ON Semiconductor
KSC5502DTTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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