KSC5502DTTU
- Mfr.Part #
- KSC5502DTTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 600V 2A TO220-3
- Stock
- 4,133
- In Stock :
- 4,133
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4 @ 1A 1V
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 600V
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- KSC5502
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Published :
- 2013
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Power Dissipation :
- 50W
- Packaging :
- Tube
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 1A
- Emitter Base Voltage (VEBO) :
- 12V
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 12
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 600V
- HTS Code :
- 8541.29.00.95
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 11MHz
- Package / Case :
- TO-220-3
- Transition Frequency :
- 11MHz
- Collector Base Voltage (VCBO) :
- 1.2kV
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Weight :
- 1.8g
- Current - Collector Cutoff (Max) :
- 100μA
- Mount :
- Through Hole
- Datasheets
- KSC5502DTTU

NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5502DTTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4 @ 1A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Parts of this part have transition frequencies of 11MHz.During maximum operation, collector current can be as low as 2A volts.
KSC5502DTTU Features
the DC current gain for this device is 4 @ 1A 1V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 11MHz
KSC5502DTTU Applications
There are a lot of ON Semiconductor
KSC5502DTTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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