KSC5502DTM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin (Sn)

hFE Min :

12

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

600V

Emitter Base Voltage (VEBO) :

12V

Current Rating :

2A

Voltage - Rated DC :

600V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 200mA, 1A

Power Dissipation :

50W

Polarity/Channel Type :

NPN

Weight :

260.37mg

Gain Bandwidth Product :

11MHz

Frequency :

11MHz

Number of Pins :

3

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

310mV

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Height :

2.39mm

ECCN Code :

EAR99

Transition Frequency :

11MHz

Radiation Hardening :

No

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

1.2kV

Current - Collector Cutoff (Max) :

100μA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Published :

2014

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Width :

6.22mm

Max Breakdown Voltage :

600V

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

600V

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

REACH SVHC :

No SVHC

Number of Elements :

1

Terminal Form :

Gull wing

Base Part Number :

KSC5502

DC Current Gain (hFE) (Min) @ Ic, Vce :

4 @ 1A 1V

Max Power Dissipation :

50W

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Length :

6.73mm

Max Collector Current :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free