KSC5502DTM
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- Mfr.Part #
- KSC5502DTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 600V 2A TO252AA
- Stock
- 13,332
- In Stock ：
- 13,332
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSC5502
- Transistor Element Material :
- SILICON
- hFE Min :
- 12
- Weight :
- 260.37mg
- Gain Bandwidth Product :
- 11MHz
- Published :
- 2014
- Collector Base Voltage (VCBO) :
- 1.2kV
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 1A
- Height :
- 2.39mm
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 11MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 600V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4 @ 1A 1V
- Frequency :
- 11MHz
- Current Rating :
- 2A
- Length :
- 6.73mm
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Saturation Voltage :
- 310mV
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 50W
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 600V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 12V
- Max Breakdown Voltage :
- 600V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 600V
- Lead Free :
- Lead Free
- Width :
- 6.22mm
- Number of Terminations :
- 2
- Power Dissipation :
- 50W
- JESD-30 Code :
- R-PSSO-G2
- Max Collector Current :
- 2A
- Factory Lead Time :
- 6 Weeks
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Datasheets
- KSC5502DTM
KSC5502DTM Documents
NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSC5502DTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 4 @ 1A 1V.With a collector emitter saturation voltage of 310mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 200mA, 1A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.A transition frequency of 11MHz is present in the part.There is a breakdown input voltage of 600V volts that it can take.Collector current can be as low as 2A volts at its maximum.
KSC5502DTM Features
the DC current gain for this device is 4 @ 1A 1V
a collector emitter saturation voltage of 310mV
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 2A
a transition frequency of 11MHz
KSC5502DTM Applications
There are a lot of ON Semiconductor
KSC5502DTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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