KSC5402DTTU
- Mfr.Part #
- KSC5402DTTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 2A TO220-3
- Stock
- 40,014
- In Stock :
- 40,014
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 200mA, 1A
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 50W
- Package / Case :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Base Voltage (VCBO) :
- 1kV
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Packaging :
- Tube
- Frequency :
- 11MHz
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 11MHz
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 450V
- Polarity/Channel Type :
- NPN
- Current Rating :
- 2A
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Saturation Voltage :
- 250mV
- Power Dissipation :
- 50W
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 450V
- Weight :
- 1.8g
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6 @ 1A 1V
- Collector Emitter Breakdown Voltage :
- 450V
- Max Collector Current :
- 2A
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 11MHz
- Mount :
- Through Hole
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Published :
- 2009
- Base Part Number :
- KSC5402
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 12V
- Datasheets
- KSC5402DTTU

NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5402DTTU Overview
In this device, the DC current gain is 6 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 200mA, 1A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).11MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
KSC5402DTTU Features
the DC current gain for this device is 6 @ 1A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 750mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 2A
a transition frequency of 11MHz
KSC5402DTTU Applications
There are a lot of ON Semiconductor
KSC5402DTTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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