KSC5402DTTU

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Mfr.Part #
KSC5402DTTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 2A TO220-3
Stock
40,014
In Stock :
40,014

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
50W
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Weight :
1.8g
Radiation Hardening :
No
Published :
2009
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
100μA
Emitter Base Voltage (VEBO) :
12V
Transistor Type :
NPN
Number of Elements :
1
Mount :
Through Hole
Transistor Application :
SWITCHING
hFE Min :
6
Gain Bandwidth Product :
11MHz
Collector Emitter Breakdown Voltage :
450V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-220-3
Vce Saturation (Max) @ Ib, Ic :
750mV @ 200mA, 1A
Transition Frequency :
11MHz
Max Power Dissipation :
50W
Element Configuration :
Single
Current Rating :
2A
Collector Emitter Saturation Voltage :
250mV
Operating Temperature :
150°C TJ
Polarity/Channel Type :
NPN
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
450V
Max Collector Current :
2A
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
Factory Lead Time :
6 Weeks
Frequency :
11MHz
Mounting Type :
Through Hole
Base Part Number :
KSC5402
Lead Free :
Lead Free
Voltage - Rated DC :
450V
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
1kV
JEDEC-95 Code :
TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 1A 1V
Number of Pins :
3
Datasheets
KSC5402DTTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5402DTTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:KSC5402, Number of Pins:3, KSC5402DTTU pinout, KSC5402DTTU datasheet PDF, KSC5402DTTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5402DTTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5402DTTU


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5402DTTU Overview


In this device, the DC current gain is 6 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 200mA, 1A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).11MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.

KSC5402DTTU Features


the DC current gain for this device is 6 @ 1A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 750mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 2A
a transition frequency of 11MHz


KSC5402DTTU Applications


There are a lot of ON Semiconductor
KSC5402DTTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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