KSC5402DTTU

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Mfr.Part #
KSC5402DTTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 2A TO220-3
Stock
40,014
In Stock :
40,014

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
750mV @ 200mA, 1A
Lead Free :
Lead Free
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
50W
Package / Case :
TO-220-3
Current - Collector Cutoff (Max) :
100μA
Collector Base Voltage (VCBO) :
1kV
Number of Elements :
1
JEDEC-95 Code :
TO-220AB
Radiation Hardening :
No
Pbfree Code :
yes
Packaging :
Tube
Frequency :
11MHz
Number of Terminations :
3
Gain Bandwidth Product :
11MHz
Transistor Type :
NPN
Collector Emitter Voltage (VCEO) :
450V
Polarity/Channel Type :
NPN
Current Rating :
2A
Element Configuration :
Single
Factory Lead Time :
6 Weeks
Collector Emitter Saturation Voltage :
250mV
Power Dissipation :
50W
Transistor Element Material :
SILICON
Voltage - Rated DC :
450V
Weight :
1.8g
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
Operating Temperature :
150°C TJ
hFE Min :
6
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 1A 1V
Collector Emitter Breakdown Voltage :
450V
Max Collector Current :
2A
Transistor Application :
SWITCHING
Transition Frequency :
11MHz
Mount :
Through Hole
Number of Pins :
3
JESD-609 Code :
e3
Published :
2009
Base Part Number :
KSC5402
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
12V
Datasheets
KSC5402DTTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5402DTTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:KSC5402, KSC5402DTTU pinout, KSC5402DTTU datasheet PDF, KSC5402DTTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5402DTTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5402DTTU


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5402DTTU Overview


In this device, the DC current gain is 6 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 200mA, 1A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).11MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.

KSC5402DTTU Features


the DC current gain for this device is 6 @ 1A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 750mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 2A
a transition frequency of 11MHz


KSC5402DTTU Applications


There are a lot of ON Semiconductor
KSC5402DTTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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