KSC5402DTTU
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- Mfr.Part #
- KSC5402DTTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 2A TO220-3
- Stock
- 4,155
- In Stock ：
- 4,155
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6 @ 1A 1V
- Weight :
- 1.8g
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 1kV
- Max Power Dissipation :
- 50W
- Base Part Number :
- KSC5402
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- NPN
- Frequency :
- 11MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 450V
- Published :
- 2009
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Current Rating :
- 2A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 12V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA
- Package / Case :
- TO-220-3
- Transition Frequency :
- 11MHz
- Power Dissipation :
- 50W
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 250mV
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 200mA, 1A
- hFE Min :
- 6
- Gain Bandwidth Product :
- 11MHz
- Collector Emitter Breakdown Voltage :
- 450V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 450V
- Datasheets
- KSC5402DTTU
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5402DTTU Overview
In this device, the DC current gain is 6 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 200mA, 1A.Keeping the emitter base voltage at 12V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).11MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
KSC5402DTTU Features
the DC current gain for this device is 6 @ 1A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 750mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 2A
a transition frequency of 11MHz
KSC5402DTTU Applications
There are a lot of ON Semiconductor
KSC5402DTTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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