KSC5338DTU
- Mfr.Part #
- KSC5338DTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A TO220-3
- Stock
- 10,856
- In Stock :
- 10,856
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 450V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5A
- Collector Emitter Voltage (VCEO) :
- 450V
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 6
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Transition Frequency :
- 11MHz
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 1.8g
- Published :
- 2010
- Frequency :
- 11MHz
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 350mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 1kV
- Power Dissipation :
- 75W
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6 @ 2A 1V
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 12V
- Current Rating :
- 5A
- Max Power Dissipation :
- 75W
- Gain Bandwidth Product :
- 11MHz
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Collector Emitter Breakdown Voltage :
- 450V
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- KSC5338DTU

NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5338DTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 6 @ 2A 1V.With a collector emitter saturation voltage of 350mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.A transition frequency of 11MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
KSC5338DTU Features
the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 11MHz
KSC5338DTU Applications
There are a lot of ON Semiconductor
KSC5338DTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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