KSC5338DTU
- Mfr.Part #
- KSC5338DTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A TO220-3
- Stock
- 10,856
- In Stock :
- 10,856
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 350mV
- Published :
- 2010
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6 @ 2A 1V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency :
- 11MHz
- Current - Collector Cutoff (Max) :
- 100μA
- Weight :
- 1.8g
- Package / Case :
- TO-220-3
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 1kV
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 75W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 450V
- Voltage - Rated DC :
- 450V
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Emitter Base Voltage (VEBO) :
- 12V
- JESD-609 Code :
- e3
- Current Rating :
- 5A
- Collector Emitter Breakdown Voltage :
- 450V
- Transition Frequency :
- 11MHz
- Gain Bandwidth Product :
- 11MHz
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 75W
- Transistor Application :
- SWITCHING
- hFE Min :
- 6
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Datasheets
- KSC5338DTU

NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5338DTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 6 @ 2A 1V.With a collector emitter saturation voltage of 350mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.A transition frequency of 11MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
KSC5338DTU Features
the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 11MHz
KSC5338DTU Applications
There are a lot of ON Semiconductor
KSC5338DTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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