KSC5338DTU
- Mfr.Part #
- KSC5338DTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A TO220-3
- Stock
- 10,856
- In Stock :
- 10,856
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Current Rating :
- 5A
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 11MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency :
- 11MHz
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 450V
- Weight :
- 1.8g
- Collector Base Voltage (VCBO) :
- 1kV
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 450V
- JESD-609 Code :
- e3
- Max Collector Current :
- 5A
- Published :
- 2010
- Emitter Base Voltage (VEBO) :
- 12V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 450V
- Current - Collector Cutoff (Max) :
- 100μA
- Lead Free :
- Lead Free
- hFE Min :
- 6
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Power Dissipation :
- 75W
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 11MHz
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6 @ 2A 1V
- Collector Emitter Saturation Voltage :
- 350mV
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Element Configuration :
- Single
- Power Dissipation :
- 75W
- Datasheets
- KSC5338DTU

NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5338DTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 6 @ 2A 1V.With a collector emitter saturation voltage of 350mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.A transition frequency of 11MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
KSC5338DTU Features
the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 11MHz
KSC5338DTU Applications
There are a lot of ON Semiconductor
KSC5338DTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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