KSC5338DTU

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Mfr.Part #
KSC5338DTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 5A TO220-3
Stock
10,856
In Stock :
10,856

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Current Rating :
5A
Factory Lead Time :
2 Weeks
Transition Frequency :
11MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Frequency :
11MHz
ECCN Code :
EAR99
Mounting Type :
Through Hole
Terminal Finish :
Tin (Sn)
Number of Pins :
3
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
450V
Weight :
1.8g
Collector Base Voltage (VCBO) :
1kV
JEDEC-95 Code :
TO-220AB
Collector Emitter Voltage (VCEO) :
450V
JESD-609 Code :
e3
Max Collector Current :
5A
Published :
2010
Emitter Base Voltage (VEBO) :
12V
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Rated DC :
450V
Current - Collector Cutoff (Max) :
100μA
Lead Free :
Lead Free
hFE Min :
6
Package / Case :
TO-220-3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Max Power Dissipation :
75W
Operating Temperature :
150°C TJ
Gain Bandwidth Product :
11MHz
Qualification Status :
Not Qualified
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 2A 1V
Collector Emitter Saturation Voltage :
350mV
Mount :
Through Hole
Polarity/Channel Type :
NPN
Number of Elements :
1
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Element Configuration :
Single
Power Dissipation :
75W
Datasheets
KSC5338DTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5338DTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:150°C TJ, KSC5338DTU pinout, KSC5338DTU datasheet PDF, KSC5338DTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5338DTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5338DTU


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5338DTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 6 @ 2A 1V.With a collector emitter saturation voltage of 350mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.A transition frequency of 11MHz is present in the part.Collector current can be as low as 5A volts at its maximum.

KSC5338DTU Features


the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 11MHz


KSC5338DTU Applications


There are a lot of ON Semiconductor
KSC5338DTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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