KSC5338DTU

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Mfr.Part #
KSC5338DTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 5A TO220-3
Stock
10,856
In Stock :
10,856

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
12V
Collector Base Voltage (VCBO) :
1kV
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 2A 1V
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Voltage - Rated DC :
450V
hFE Min :
6
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
1.8g
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Terminal Finish :
Tin (Sn)
Polarity/Channel Type :
NPN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2010
Operating Temperature :
150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Through Hole
Pbfree Code :
yes
Transistor Element Material :
SILICON
Transistor Type :
NPN
Factory Lead Time :
2 Weeks
Frequency :
11MHz
Transition Frequency :
11MHz
Number of Elements :
1
Max Collector Current :
5A
Element Configuration :
Single
Qualification Status :
Not Qualified
Packaging :
Tube
Package / Case :
TO-220-3
Number of Pins :
3
Power Dissipation :
75W
Gain Bandwidth Product :
11MHz
Current Rating :
5A
Collector Emitter Breakdown Voltage :
450V
Max Power Dissipation :
75W
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
450V
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100μA
Collector Emitter Saturation Voltage :
350mV
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Datasheets
KSC5338DTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5338DTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, KSC5338DTU pinout, KSC5338DTU datasheet PDF, KSC5338DTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5338DTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5338DTU


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5338DTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 6 @ 2A 1V.With a collector emitter saturation voltage of 350mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.A transition frequency of 11MHz is present in the part.Collector current can be as low as 5A volts at its maximum.

KSC5338DTU Features


the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 11MHz


KSC5338DTU Applications


There are a lot of ON Semiconductor
KSC5338DTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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