KSC5338D

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Mfr.Part #
KSC5338D
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 5A TO220-3
Stock
1,143
In Stock :
1,143

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
450V
Collector Base Voltage (VCBO) :
1kV
Transition Frequency :
11MHz
Collector Emitter Voltage (VCEO) :
450V
Published :
2011
Collector Emitter Saturation Voltage :
350mV
Max Collector Current :
5A
Power Dissipation :
75W
hFE Min :
6
Voltage - Rated DC :
450V
Polarity/Channel Type :
NPN
Number of Pins :
3
Package / Case :
TO-220-3
Lead Free :
Lead Free
Element Configuration :
Single
Packaging :
Bulk
Transistor Type :
NPN
Max Power Dissipation :
75W
Number of Elements :
1
Radiation Hardening :
No
Mounting Type :
Through Hole
Number of Terminations :
3
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Frequency :
11MHz
Weight :
1.8g
Pbfree Code :
yes
Transistor Application :
SWITCHING
Factory Lead Time :
13 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
12V
ECCN Code :
EAR99
JEDEC-95 Code :
TO-220AB
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Current - Collector Cutoff (Max) :
100μA
Gain Bandwidth Product :
11MHz
Terminal Finish :
Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 2A 1V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Current Rating :
5A
Operating Temperature :
150°C TJ
Mount :
Through Hole
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5338D from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, KSC5338D pinout, KSC5338D datasheet PDF, KSC5338D amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5338D ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5338D


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole

KSC5338D Overview


This device has a DC current gain of 6 @ 2A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 500mV @ 200mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 11MHz.A maximum collector current of 5A volts is possible.

KSC5338D Features


the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 11MHz


KSC5338D Applications


There are a lot of ON Semiconductor
KSC5338D applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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