KSC1815YTA
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- Mfr.Part #
- KSC1815YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 14,194
- In Stock ：
- 14,194
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 6 Weeks
- Weight :
- 240mg
- Voltage - Rated DC :
- 50V
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 80MHz
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2mA 6V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 150mA
- Height :
- 5.33mm
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 80MHz
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Frequency :
- 80MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 70
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 100mV
- Power Dissipation :
- 400mW
- Terminal Position :
- BOTTOM
- Current Rating :
- 150mA
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tape and Box (TB)
- Max Power Dissipation :
- 400mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Mount :
- Through Hole
- Width :
- 4.19mm
- Length :
- 5.2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 50V
- Base Part Number :
- KSC1815
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Datasheets
- KSC1815YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC1815YTA Overview
In this device, the DC current gain is 70 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (150mA).80MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 150mA volts.
KSC1815YTA Features
the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 80MHz
KSC1815YTA Applications
There are a lot of ON Semiconductor
KSC1815YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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