KSC1008GTA
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- Mfr.Part #
- KSC1008GTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 16,000
- In Stock ：
- 16,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- 200mV
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 50MHz
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- KSC1008
- hFE Min :
- 40
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 800mW
- Voltage - Rated DC :
- 60V
- Current Rating :
- 700mA
- Number of Elements :
- 1
- Published :
- 2007
- Transition Frequency :
- 50MHz
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Max Collector Current :
- 700mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Power Dissipation :
- 800mW
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 240mg
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 8V
- Datasheets
- KSC1008GTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC1008GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.
KSC1008GTA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008GTA Applications
There are a lot of ON Semiconductor
KSC1008GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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