KSC10080BU
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- Mfr.Part #
- KSC10080BU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- KSC1008OBU - NPN EPITACIAL SILIC
- Stock
- 15,396
- In Stock ：
- 15,396
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Product Status :
- Obsolete
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 50mA, 2V
- Power - Max :
- 800 mW
- Supplier Device Package :
- TO-92-3
- Frequency - Transition :
- 50MHz
- Current - Collector (Ic) (Max) :
- 700 mA
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Package :
- Bulk
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- KSC10080BU
NPN 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole
KSC10080BU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 50mA, 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 500mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (60 V maximal voltage).
KSC10080BU Features
the DC current gain for this device is 40 @ 50mA, 2V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the supplier device package of TO-92-3
KSC10080BU Applications
There are a lot of Fairchild Semiconductor
KSC10080BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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