KSC1008COBU
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- Mfr.Part #
- KSC1008COBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 14,351
- In Stock ：
- 14,351
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 200mV
- Mounting Type :
- Through Hole
- Base Part Number :
- KSC1008
- Max Power Dissipation :
- 800mW
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 800mW
- ECCN Code :
- EAR99
- Terminal Finish :
- MATTE TIN
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Max Collector Current :
- 700mA
- Gain Bandwidth Product :
- 50MHz
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 8V
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mount :
- Through Hole
- Packaging :
- Bulk
- Voltage - Rated DC :
- 60V
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- hFE Min :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 50mA 2V
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transition Frequency :
- 50MHz
- Polarity/Channel Type :
- NPN
- Frequency :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 700mA
- JESD-609 Code :
- e3
- Datasheets
- KSC1008COBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC1008COBU Overview
This device has a DC current gain of 70 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of 700mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 700mA volts is possible.
KSC1008COBU Features
the DC current gain for this device is 70 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008COBU Applications
There are a lot of ON Semiconductor
KSC1008COBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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