KSC1008OBU
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- Mfr.Part #
- KSC1008OBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 26,198
- In Stock ：
- 26,198
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 50MHz
- Packaging :
- Bulk
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 800mW
- Element Configuration :
- Single
- Max Collector Current :
- 700mA
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 60V
- Weight :
- 179mg
- Pbfree Code :
- yes
- Power Dissipation :
- 800mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Frequency :
- 50MHz
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 7 Weeks
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- 700mA
- Emitter Base Voltage (VEBO) :
- 8V
- Base Part Number :
- KSC1008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 50mA 2V
- Gain Bandwidth Product :
- 50MHz
- Number of Elements :
- 1
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Length :
- 4.58mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Width :
- 3.86mm
- Voltage - Rated DC :
- 60V
- Number of Terminations :
- 3
- Published :
- 2006
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- hFE Min :
- 40
- Height :
- 4.58mm
- Collector Emitter Saturation Voltage :
- 200mV
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Datasheets
- KSC1008OBU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC1008OBU Overview
This device has a DC current gain of 70 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of 700mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 700mA volts is possible.
KSC1008OBU Features
the DC current gain for this device is 70 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008OBU Applications
There are a lot of ON Semiconductor
KSC1008OBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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