KSC1008GBU
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- Mfr.Part #
- KSC1008GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 11,270
- In Stock ：
- 11,270
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 40
- Power Dissipation :
- 800mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Max Power Dissipation :
- 800mW
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 8V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Bulk
- Frequency :
- 50MHz
- Voltage - Rated DC :
- 60V
- Transistor Element Material :
- SILICON
- Current Rating :
- 700mA
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 50MHz
- Terminal Finish :
- MATTE TIN
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 200mV
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 700mA
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Position :
- BOTTOM
- Base Part Number :
- KSC1008
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 50MHz
- Datasheets
- KSC1008GBU
KSC1008GBU Documents
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC1008GBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 8V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 700mA volts.
KSC1008GBU Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008GBU Applications
There are a lot of ON Semiconductor
KSC1008GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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