KSC1008GBU
- Mfr.Part #
- KSC1008GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 11,270
- In Stock :
- 11,270
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Terminal Finish :
- MATTE TIN
- Base Part Number :
- KSC1008
- Transition Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 8V
- Power Dissipation :
- 800mW
- hFE Min :
- 40
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 200mV
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Current Rating :
- 700mA
- Max Collector Current :
- 700mA
- Max Power Dissipation :
- 800mW
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 50MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Frequency :
- 50MHz
- Transistor Type :
- NPN
- Datasheets
- KSC1008GBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC1008GBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 8V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 700mA volts.
KSC1008GBU Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008GBU Applications
There are a lot of ON Semiconductor
KSC1008GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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