KSC1008CYTA
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- Mfr.Part #
- KSC1008CYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 17
- In Stock ：
- 17
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Frequency :
- 50MHz
- Weight :
- 240mg
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Width :
- 3.93mm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 8V
- Gain Bandwidth Product :
- 50MHz
- Max Breakdown Voltage :
- 60V
- Mount :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 200mV
- Element Configuration :
- Single
- Transition Frequency :
- 50MHz
- hFE Min :
- 40
- Number of Terminations :
- 3
- Current Rating :
- 700mA
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 800mW
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Height :
- 4.7mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- KSC1008
- Packaging :
- Tape and Box (TB)
- Length :
- 4.7mm
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 700mA
- Power Dissipation :
- 800mW
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- KSC1008CYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC1008CYTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.
KSC1008CYTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008CYTA Applications
There are a lot of ON Semiconductor
KSC1008CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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