KSC1008CYTA

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Mfr.Part #
KSC1008CYTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 60V 0.7A TO92-3
Stock
17
In Stock :
17

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Qualification Status :
Not Qualified
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 50mA 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Base Part Number :
KSC1008
Current Rating :
700mA
Current - Collector Cutoff (Max) :
100nA ICBO
Power Dissipation :
800mW
Packaging :
Tape and Box (TB)
Factory Lead Time :
6 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lead Free :
Lead Free
Transistor Type :
NPN
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
8V
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
60V
Max Power Dissipation :
800mW
Operating Temperature :
150°C TJ
Width :
3.93mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Emitter Saturation Voltage :
200mV
Pbfree Code :
yes
Frequency :
50MHz
Max Breakdown Voltage :
60V
Mounting Type :
Through Hole
Max Collector Current :
700mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
4.7mm
Published :
2006
Gain Bandwidth Product :
50MHz
hFE Min :
40
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 500mA
Transistor Element Material :
SILICON
Element Configuration :
Single
Polarity/Channel Type :
NPN
Height :
4.7mm
Terminal Finish :
Tin (Sn)
Collector Base Voltage (VCBO) :
80V
Number of Elements :
1
Weight :
240mg
JESD-609 Code :
e3
Collector Emitter Voltage (VCEO) :
60V
Terminal Position :
BOTTOM
Number of Pins :
3
Transition Frequency :
50MHz
Voltage - Rated DC :
60V
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC1008CYTA from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:KSC1008, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), KSC1008CYTA pinout, KSC1008CYTA datasheet PDF, KSC1008CYTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC1008CYTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC1008CYTA


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

KSC1008CYTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.

KSC1008CYTA Features


the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz


KSC1008CYTA Applications


There are a lot of ON Semiconductor
KSC1008CYTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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