KSC1008CYTA
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- Mfr.Part #
- KSC1008CYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 17
- In Stock ：
- 17
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.93mm
- Base Part Number :
- KSC1008
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 50MHz
- Transition Frequency :
- 50MHz
- Frequency :
- 50MHz
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 800mW
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 200mV
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 6 Weeks
- Terminal Position :
- BOTTOM
- Length :
- 4.7mm
- Published :
- 2006
- Weight :
- 240mg
- Number of Pins :
- 3
- Max Power Dissipation :
- 800mW
- Height :
- 4.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Box (TB)
- Current Rating :
- 700mA
- Mount :
- Through Hole
- hFE Min :
- 40
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 60V
- Emitter Base Voltage (VEBO) :
- 8V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 700mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- KSC1008CYTA
KSC1008CYTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC1008CYTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.
KSC1008CYTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008CYTA Applications
There are a lot of ON Semiconductor
KSC1008CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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