KSC1008CYTA
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- Mfr.Part #
- KSC1008CYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 17
- In Stock ：
- 17
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 800mW
- Collector Emitter Breakdown Voltage :
- 60V
- Frequency :
- 50MHz
- Height :
- 4.7mm
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 8V
- Width :
- 3.93mm
- Weight :
- 240mg
- hFE Min :
- 40
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- KSC1008
- Mounting Type :
- Through Hole
- Current Rating :
- 700mA
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Length :
- 4.7mm
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Number of Pins :
- 3
- Power Dissipation :
- 800mW
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Box (TB)
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Published :
- 2006
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 700mA
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Datasheets
- KSC1008CYTA
KSC1008CYTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC1008CYTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.
KSC1008CYTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008CYTA Applications
There are a lot of ON Semiconductor
KSC1008CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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