KSC1009YTA
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- Mfr.Part #
- KSC1009YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.7A TO92-3
- Stock
- 15,176
- In Stock ：
- 15,176
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Max Collector Current :
- 700mA
- Collector Emitter Saturation Voltage :
- 200mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Weight :
- 240mg
- Factory Lead Time :
- 6 Weeks
- Max Breakdown Voltage :
- 140V
- Collector Emitter Breakdown Voltage :
- 140V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 20mA, 200mA
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 40
- Width :
- 3.86mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Power Dissipation :
- 800mW
- Collector Emitter Voltage (VCEO) :
- 140V
- Transition Frequency :
- 50MHz
- Mounting Type :
- Through Hole
- Current Rating :
- 700mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Published :
- 2001
- Base Part Number :
- KSC1009
- Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Height :
- 4.58mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 160V
- Length :
- 4.58mm
- Voltage - Rated DC :
- 140V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 8V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Power Dissipation :
- 800mW
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 50MHz
- Datasheets
- KSC1009YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC1009YTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 2V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 20mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 8V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 700mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 140V volts before it breaks down.A maximum collector current of 700mA volts can be achieved.
KSC1009YTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 700mV @ 20mA, 200mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1009YTA Applications
There are a lot of ON Semiconductor
KSC1009YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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