KSC1008YTF
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- Mfr.Part #
- KSC1008YTF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 36,149
- In Stock ：
- 36,149
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- KSC1008
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Current - Collector (Ic) (Max) :
- 700mA
- Power - Max :
- 800mW
- Supplier Device Package :
- TO-92-3
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Frequency - Transition :
- 50MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSC1008YTF
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
KSC1008YTF Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 500mA.Product comes in the supplier's device package TO-92-3.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
KSC1008YTF Features
the DC current gain for this device is 120 @ 50mA 2V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the supplier device package of TO-92-3
KSC1008YTF Applications
There are a lot of ON Semiconductor
KSC1008YTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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