KSC1008YTA
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- Mfr.Part #
- KSC1008YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 24,475
- In Stock ：
- 24,475
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 200mV
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 800mW
- Published :
- 2007
- Frequency :
- 50MHz
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Box (TB)
- Number of Pins :
- 3
- Max Collector Current :
- 700mA
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 60V
- Base Part Number :
- KSC1008
- Transition Frequency :
- 50MHz
- Power Dissipation :
- 800mW
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Current Rating :
- 700mA
- Weight :
- 240mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 40
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- 8V
- Collector Emitter Voltage (VCEO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Datasheets
- KSC1008YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC1008YTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 2V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 8V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 700mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 700mA volts can be achieved.
KSC1008YTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008YTA Applications
There are a lot of ON Semiconductor
KSC1008YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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