KSC1008OBU

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Mfr.Part #
KSC1008OBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 60V 0.7A TO92-3
Stock
15,436
In Stock :
15,436

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Pbfree Code :
yes
Transition Frequency :
50MHz
Transistor Element Material :
SILICON
Number of Terminations :
3
Weight :
179mg
hFE Min :
40
Gain Bandwidth Product :
50MHz
Terminal Finish :
Tin (Sn)
Height :
4.58mm
Emitter Base Voltage (VEBO) :
8V
Width :
3.86mm
Current Rating :
700mA
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 500mA
Factory Lead Time :
7 Weeks
Base Part Number :
KSC1008
Collector Base Voltage (VCBO) :
80V
Collector Emitter Voltage (VCEO) :
60V
Published :
2006
Mount :
Through Hole
Lead Free :
Lead Free
Mounting Type :
Through Hole
Number of Elements :
1
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Polarity/Channel Type :
NPN
Collector Emitter Saturation Voltage :
200mV
Power Dissipation :
800mW
Terminal Position :
BOTTOM
Number of Pins :
3
Max Collector Current :
700mA
Frequency :
50MHz
Packaging :
Bulk
Operating Temperature :
150°C TJ
Length :
4.58mm
ECCN Code :
EAR99
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 50mA 2V
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
60V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Element Configuration :
Single
Max Power Dissipation :
800mW
Datasheets
KSC1008OBU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC1008OBU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:KSC1008, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, Operating Temperature:150°C TJ, KSC1008OBU pinout, KSC1008OBU datasheet PDF, KSC1008OBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC1008OBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC1008OBU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

KSC1008OBU Overview


This device has a DC current gain of 70 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.This device has a current rating of 700mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 700mA volts is possible.

KSC1008OBU Features


the DC current gain for this device is 70 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz


KSC1008OBU Applications


There are a lot of ON Semiconductor
KSC1008OBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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